BFP650H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Factory Lead Time :

4 Weeks

Transistor Type :

NPN

Published :

2005

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Transistor Element Material :

SILICON GERMANIUM CARBON

Contact Plating :

Tin

Terminal Form :

Gull wing

Power Dissipation :

500mW

Additional Feature :

LOW NOISE

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

4.5V

Max Breakdown Voltage :

4.5V

Transition Frequency :

42000MHz

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

13V

Max Power Dissipation :

500mW

Max Collector Current :

150mA

Lead Free :

Lead Free

Element Configuration :

Single

Height :

900μm

Collector Emitter Voltage (VCEO) :

4V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Frequency :

41GHz

Package / Case :

SC-82A, SOT-343

Width :

1.25mm

Halogen Free :

Halogen Free

Length :

2mm

Base Part Number :

BFP650

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

Number of Elements :

1

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

1.2V

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Number of Terminations :

4

Frequency - Transition :

37GHz

Number of Pins :

4

JESD-609 Code :

e3

Gain :

10.5dB ~ 21.5dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA 3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)