BFP650H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

500mW

Length :

2mm

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Lead Free :

Lead Free

Number of Elements :

1

Element Configuration :

Single

Number of Terminations :

4

Max Breakdown Voltage :

4.5V

Collector Emitter Voltage (VCEO) :

4V

Terminal Position :

Dual

Halogen Free :

Halogen Free

Additional Feature :

LOW NOISE

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA 3V

Collector Emitter Breakdown Voltage :

4.5V

Transistor Type :

NPN

Operating Temperature :

150°C TJ

Frequency - Transition :

37GHz

Packaging :

Tape and Reel (TR)

Height :

900μm

Gain :

10.5dB ~ 21.5dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Width :

1.25mm

Collector Base Voltage (VCBO) :

13V

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON GERMANIUM CARBON

Base Part Number :

BFP650

Contact Plating :

Tin

Transition Frequency :

42000MHz

Number of Pins :

4

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Max Collector Current :

150mA

Terminal Form :

Gull wing

Package / Case :

SC-82A, SOT-343

Frequency :

41GHz

Mount :

Surface Mount

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

1.2V

Power Dissipation :

500mW

RoHS Status :

ROHS3 Compliant