BFP650H6327XTSA1
- Mfr.Part #
- BFP650H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-82A, SOT-343
- Datasheet
- Download
- Description
- RF TRANS NPN 4.5V 37GHZ SOT343-4
- Stock
- 805,758
- In Stock :
- 805,758
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Transistor Application :
- AMPLIFIER
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON GERMANIUM CARBON
- Frequency :
- 41GHz
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 37GHz
- Emitter Base Voltage (VEBO) :
- 1.2V
- Gain :
- 10.5dB ~ 21.5dB
- Halogen Free :
- Halogen Free
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.25mm
- Collector Emitter Voltage (VCEO) :
- 4V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Height :
- 900μm
- Power Dissipation :
- 500mW
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 80mA 3V
- Number of Elements :
- 1
- Length :
- 2mm
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 4.5V
- Additional Feature :
- LOW NOISE
- Element Configuration :
- Single
- Noise Figure (dB Typ @ f) :
- 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
- Package / Case :
- SC-82A, SOT-343
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 4.5V
- Max Collector Current :
- 150mA
- Number of Pins :
- 4
- Published :
- 2005
- Transition Frequency :
- 42000MHz
- Base Part Number :
- BFP650
- Collector Base Voltage (VCBO) :
- 13V
- Number of Terminations :
- 4
- Max Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- Datasheets
- BFP650H6327XTSA1

BFP650H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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