BFR360FH6327XTSA1
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- Mfr.Part #
- BFR360FH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- RF TRANS NPN 9V 14GHZ TSFP-3
- Stock
- 14,560
- In Stock ：
- 14,560
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Gain :
- 15.5dB
- ECCN Code :
- EAR99
- Package / Case :
- SOT-723
- Power Dissipation :
- 210mW
- Max Collector Current :
- 35mA
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Test Frequency :
- 1.8GHz
- Collector Base Voltage (VCBO) :
- 15V
- Mounting Type :
- Surface Mount
- Frequency :
- 14GHz
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Transition Frequency :
- 14000MHz
- Noise Figure (dB Typ @ f) :
- 1dB @ 1.8GHz
- Emitter Base Voltage (VEBO) :
- 2V
- Packaging :
- Tape and Reel (TR)
- Collector-Base Capacitance-Max :
- 0.5pF
- Collector Emitter Voltage (VCEO) :
- 6V
- Halogen Free :
- Halogen Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 90 @ 15mA 3V
- Collector Emitter Breakdown Voltage :
- 6V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 9V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 210mW
- Contact Plating :
- Tin
- Voltage - Collector Emitter Breakdown (Max) :
- 9V
- hFE Min :
- 60
- Radiation Hardening :
- No
- Base Part Number :
- BFR360
- Datasheets
- BFR360FH6327XTSA1
BFR360FH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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