BFR360FH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

2V

Terminal Form :

Flat

Max Power Dissipation :

210mW

Test Frequency :

1.8GHz

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

6V

Contact Plating :

Tin

Operating Temperature :

150°C TJ

Package / Case :

SOT-723

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Termination :

SMD/SMT

Published :

2005

Transition Frequency :

14000MHz

Packaging :

Tape and Reel (TR)

Collector-Base Capacitance-Max :

0.5pF

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 15mA 3V

Voltage - Collector Emitter Breakdown (Max) :

9V

hFE Min :

60

Terminal Position :

Dual

Base Part Number :

BFR360

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Halogen Free :

Halogen Free

Polarity/Channel Type :

NPN

Max Collector Current :

35mA

Configuration :

Single

Collector Base Voltage (VCBO) :

15V

Collector Emitter Voltage (VCEO) :

6V

Gain :

15.5dB

Transistor Element Material :

SILICON

Number of Terminations :

3

Lead Free :

Lead Free

Number of Elements :

1

Transistor Application :

AMPLIFIER

Frequency :

14GHz

Power Dissipation :

210mW

ECCN Code :

EAR99

Max Breakdown Voltage :

9V

Factory Lead Time :

8 Weeks

Mount :

Surface Mount

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1dB @ 1.8GHz

Transistor Type :

NPN