BFR193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

Power Dissipation :

580mW

Published :

2014

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain :

10dB ~ 15dB

Contact Plating :

Tin

Height :

1mm

Transistor Type :

NPN

Max Power Dissipation :

580mW

Mount :

Surface Mount

Number of Elements :

1

Number of Pins :

3

Base Part Number :

BFR193

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

20V

Frequency :

8GHz

Factory Lead Time :

4 Weeks

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

2V

Voltage - Rated DC :

12V

Terminal Form :

Gull wing

Pbfree Code :

yes

Current - Collector (Ic) (Max) :

80mA

Polarity/Channel Type :

NPN

Transition Frequency :

8000MHz

Current Rating :

65mA

Halogen Free :

Not Halogen Free

Length :

2.9mm

Radiation Hardening :

No

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

12V

Max Collector Current :

80mA

Width :

1.3mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON