BFR106,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

LOW NOISE

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA 9V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Power Dissipation Ambient-Max :

0.5W

Polarity/Channel Type :

NPN

Published :

1997

Surface Mount :

yes

Transistor Type :

NPN

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Transition Frequency :

5000MHz

Reference Standard :

CECC

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Temperature :

175°C TJ

Frequency - Transition :

5GHz

Noise Figure (dB Typ @ f) :

3.5dB @ 800MHz

Power - Max :

500mW

Pin Count :

3

Transistor Application :

AMPLIFIER

Voltage - Collector Emitter Breakdown (Max) :

15V

Base Part Number :

BFR106

Power Dissipation-Max (Abs) :

0.35W

Package / Case :

TO-236-3, SC-59, SOT-23-3

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Configuration :

Single

JESD-30 Code :

R-PDSO-G3

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

100mA

Terminal Position :

Dual

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Qualification Status :

Not Qualified