BFR106E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transition Frequency :

5000MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

2.9mm

Power Dissipation :

700mW

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

20V

Voltage - Rated DC :

15V

Collector Emitter Voltage (VCEO) :

16V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Base Part Number :

BFR106

Published :

2012

Terminal Form :

Gull wing

Lead Free :

Lead Free

Pbfree Code :

yes

Factory Lead Time :

99 Weeks

Width :

1.3mm

Halogen Free :

Not Halogen Free

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

hFE Min :

70

Collector Emitter Breakdown Voltage :

15V

Emitter Base Voltage (VEBO) :

3V

Gain :

8.5dB ~ 13dB

Max Breakdown Voltage :

12V

Element Configuration :

Single

Terminal Position :

Dual

Number of Pins :

3

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Frequency :

5GHz

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Current Rating :

210mA

Number of Elements :

1

Height :

1.1mm

Max Power Dissipation :

700mW

Noise Figure (dB Typ @ f) :

1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Max Collector Current :

210mA