BFP420H6327XTSA1
- Mfr.Part #
- BFP420H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-82A, SOT-343
- Datasheet
- Download
- Description
- RF TRANS NPN 5V 25GHZ SOT343
- Stock
- 412,338
- In Stock :
- 412,338
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 35mA
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PDSO-G4
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BFP420
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Transition Frequency :
- 25000MHz
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 160mW
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 5V
- Emitter Base Voltage (VEBO) :
- 1.5V
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 25GHz
- Published :
- 2003
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 20mA 4V
- Number of Terminations :
- 4
- hFE Min :
- 60
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 60mA
- Height :
- 1mm
- Transistor Element Material :
- SILICON
- Test Frequency :
- 1.8GHz
- Package / Case :
- SC-82A, SOT-343
- Gain :
- 21dB
- Collector Base Voltage (VCBO) :
- 15V
- Polarity/Channel Type :
- NPN
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 5V
- Power Dissipation :
- 210mW
- Collector Emitter Voltage (VCEO) :
- 15V
- Transistor Type :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1.8GHz
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Datasheets
- BFP420H6327XTSA1

BFP420H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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