BFP420H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

5V

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

1.5V

Factory Lead Time :

6 Weeks

Mount :

Surface Mount

Gain :

21dB

Published :

2003

JESD-30 Code :

R-PDSO-G4

JESD-609 Code :

e3

Noise Figure (dB Typ @ f) :

1.1dB @ 1.8GHz

Transistor Application :

AMPLIFIER

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Lead Free :

Lead Free

Max Breakdown Voltage :

5V

Collector Emitter Voltage (VCEO) :

15V

Frequency :

25GHz

Number of Elements :

1

Height :

1mm

Collector Base Voltage (VCBO) :

15V

Base Part Number :

BFP420

REACH SVHC :

No SVHC

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

hFE Min :

60

Test Frequency :

1.8GHz

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Power Dissipation :

210mW

Terminal Form :

Gull wing

Transistor Type :

NPN

Number of Pins :

3

Package / Case :

SC-82A, SOT-343

Halogen Free :

Halogen Free

Current - Collector (Ic) (Max) :

35mA

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 4V

Number of Terminations :

4

Operating Temperature :

150°C TJ

Max Collector Current :

60mA

Max Power Dissipation :

160mW

Transition Frequency :

25000MHz

Configuration :

Single

ECCN Code :

EAR99