BFP420H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

5V

Number of Terminations :

4

ECCN Code :

EAR99

Package / Case :

SC-82A, SOT-343

Configuration :

Single

JESD-30 Code :

R-PDSO-G4

Collector Base Voltage (VCBO) :

15V

Emitter Base Voltage (VEBO) :

1.5V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

150°C TJ

hFE Min :

60

Transition Frequency :

25000MHz

RoHS Status :

ROHS3 Compliant

Max Collector Current :

60mA

Max Power Dissipation :

160mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 4V

Power Dissipation :

210mW

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Gain :

21dB

Radiation Hardening :

No

Height :

1mm

Base Part Number :

BFP420

Frequency :

25GHz

Transistor Element Material :

SILICON

Lead Free :

Lead Free

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Collector Emitter Voltage (VCEO) :

15V

Number of Pins :

3

Transistor Type :

NPN

Termination :

SMD/SMT

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Noise Figure (dB Typ @ f) :

1.1dB @ 1.8GHz

Halogen Free :

Halogen Free

Mount :

Surface Mount

Test Frequency :

1.8GHz

Number of Elements :

1

Max Breakdown Voltage :

5V

Published :

2003

Terminal Position :

Dual

Current - Collector (Ic) (Max) :

35mA