BFP420FH6327XTSA1
- Mfr.Part #
- BFP420FH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 4-SMD, Flat Leads
- Datasheet
- Download
- Description
- RF TRANS NPN 5.5V 25GHZ 4TSFP
- Stock
- 33,836
- In Stock :
- 33,836
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1.8GHz
- Operating Temperature :
- 150°C TJ
- Gain :
- 19.5dB
- Published :
- 2006
- Number of Pins :
- 4
- Power Dissipation :
- 210mW
- Collector Emitter Breakdown Voltage :
- 5.5V
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Collector-Base Capacitance-Max :
- 0.3pF
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 5mA 4V
- Frequency :
- 25GHz
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 160mW
- Transition Frequency :
- 25000MHz
- Transistor Element Material :
- SILICON
- Package / Case :
- 4-SMD, Flat Leads
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Configuration :
- Single
- Power - Max :
- 160mW
- Collector Base Voltage (VCBO) :
- 15V
- JESD-609 Code :
- e3
- Base Part Number :
- BFP420
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 4.5V
- Contact Plating :
- Tin
- Max Collector Current :
- 35mA
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 5.5V
- Emitter Base Voltage (VEBO) :
- 1.5V
- Datasheets
- BFP420FH6327XTSA1

BFP420FH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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