BFR193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

580mW

Width :

1.3mm

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

20V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Base Part Number :

BFR193

Voltage - Rated DC :

12V

Transition Frequency :

8000MHz

Length :

2.9mm

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

2V

Operating Temperature :

150°C TJ

Height :

1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Element Configuration :

Single

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Current Rating :

65mA

Power Dissipation :

580mW

Transistor Element Material :

SILICON

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Pins :

3

Mounting Type :

Surface Mount

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

12V

Frequency :

8GHz

Current - Collector (Ic) (Max) :

80mA

Halogen Free :

Not Halogen Free

Gain :

10dB ~ 15dB

Terminal Position :

Dual

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Radiation Hardening :

No

Max Collector Current :

80mA

Published :

2014

Pbfree Code :

yes

Lead Free :

Lead Free