BFR193E6327HTSA1
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- Mfr.Part #
- BFR193E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF TRANS NPN 12V 8GHZ SOT23-3
- Stock
- 133,036
- In Stock ：
- 133,036
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Width :
- 1.3mm
- Voltage - Rated DC :
- 12V
- Current - Collector (Ic) (Max) :
- 80mA
- Operating Temperature :
- 150°C TJ
- Frequency :
- 8GHz
- Max Collector Current :
- 80mA
- Transistor Type :
- NPN
- Halogen Free :
- Not Halogen Free
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 8000MHz
- Length :
- 2.9mm
- Number of Elements :
- 1
- Published :
- 2014
- Terminal Form :
- Gull wing
- Power Dissipation :
- 580mW
- Collector Emitter Voltage (VCEO) :
- 12V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 30mA 8V
- Factory Lead Time :
- 4 Weeks
- Gain :
- 10dB ~ 15dB
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Current Rating :
- 65mA
- Height :
- 1mm
- Base Part Number :
- BFR193
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 2V
- Max Power Dissipation :
- 580mW
- Packaging :
- Tape and Reel (TR)
- Noise Figure (dB Typ @ f) :
- 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Transistor Element Material :
- SILICON
- Datasheets
- BFR193E6327HTSA1
BFR193E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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