BFR193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

150°C TJ

Max Collector Current :

80mA

Length :

2.9mm

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Height :

1mm

JESD-609 Code :

e3

Contact Plating :

Tin

Radiation Hardening :

No

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Terminal Position :

Dual

Halogen Free :

Not Halogen Free

Base Part Number :

BFR193

Transistor Type :

NPN

Voltage - Rated DC :

12V

Emitter Base Voltage (VEBO) :

2V

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

12V

Transition Frequency :

8000MHz

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Frequency :

8GHz

Number of Elements :

1

Number of Terminations :

3

Number of Pins :

3

Gain :

10dB ~ 15dB

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

65mA

Power Dissipation :

580mW

Collector Base Voltage (VCBO) :

20V

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Max Power Dissipation :

580mW

Lead Free :

Lead Free

Width :

1.3mm

Current - Collector (Ic) (Max) :

80mA

Published :

2014

Mount :

Surface Mount