BFR193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Contact Plating :

Tin

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BFR193

Frequency :

8GHz

Current - Collector (Ic) (Max) :

80mA

Width :

1.3mm

Mount :

Surface Mount

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Halogen Free :

Not Halogen Free

Max Collector Current :

80mA

Transistor Type :

NPN

Number of Pins :

3

Element Configuration :

Single

Length :

2.9mm

Transition Frequency :

8000MHz

Max Power Dissipation :

580mW

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Height :

1mm

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Current Rating :

65mA

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

2V

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Voltage - Rated DC :

12V

Pbfree Code :

yes

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Collector Base Voltage (VCBO) :

20V

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Power Dissipation :

580mW

RoHS Status :

ROHS3 Compliant

Published :

2014

Gain :

10dB ~ 15dB

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

12V

Transistor Element Material :

SILICON