BFR193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

Voltage - Rated DC :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

80mA

Factory Lead Time :

4 Weeks

Current Rating :

65mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Packaging :

Tape and Reel (TR)

Published :

2014

Contact Plating :

Tin

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Number of Pins :

3

Gain :

10dB ~ 15dB

Number of Terminations :

3

Length :

2.9mm

Halogen Free :

Not Halogen Free

Collector Base Voltage (VCBO) :

20V

Power Dissipation :

580mW

Pbfree Code :

yes

Terminal Position :

Dual

Mount :

Surface Mount

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

2V

Transistor Type :

NPN

Height :

1mm

Base Part Number :

BFR193

Collector Emitter Voltage (VCEO) :

12V

Frequency :

8GHz

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Elements :

1

Transition Frequency :

8000MHz

Width :

1.3mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Max Power Dissipation :

580mW