BFR193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Gull wing

Gain :

10dB ~ 15dB

Number of Pins :

3

Width :

1.3mm

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Lead Free :

Lead Free

Published :

2014

Max Power Dissipation :

580mW

Number of Elements :

1

Base Part Number :

BFR193

Pbfree Code :

yes

Element Configuration :

Single

Operating Temperature :

150°C TJ

Height :

1mm

Length :

2.9mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

580mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

80mA

Mounting Type :

Surface Mount

Number of Terminations :

3

Current - Collector (Ic) (Max) :

80mA

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

12V

Radiation Hardening :

No

Frequency :

8GHz

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

20V

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Voltage - Rated DC :

12V

Emitter Base Voltage (VEBO) :

2V

Transistor Type :

NPN

Transition Frequency :

8000MHz

Current Rating :

65mA

Terminal Position :

Dual

Contact Plating :

Tin

Halogen Free :

Not Halogen Free