BFR193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Voltage - Rated DC :

12V

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Published :

2014

Number of Terminations :

3

Gain :

10dB ~ 15dB

Height :

1mm

Radiation Hardening :

No

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Transistor Type :

NPN

Contact Plating :

Tin

Current Rating :

65mA

Base Part Number :

BFR193

Pbfree Code :

yes

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

12V

Element Configuration :

Single

Width :

1.3mm

Frequency :

8GHz

Factory Lead Time :

4 Weeks

Max Collector Current :

80mA

Transistor Element Material :

SILICON

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power Dissipation :

580mW

Transition Frequency :

8000MHz

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

580mW

Emitter Base Voltage (VEBO) :

2V

Number of Elements :

1

Collector Base Voltage (VCBO) :

20V

Halogen Free :

Not Halogen Free

Mount :

Surface Mount

Length :

2.9mm

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing