BFP196WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Width :

1.25mm

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

12V

Number of Pins :

4

Length :

2mm

Height :

900μm

Max Power Dissipation :

700mW

Terminal Position :

Dual

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Max Breakdown Voltage :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 8V

Element Configuration :

Single

Transistor Element Material :

SILICON

Frequency :

7.5GHz

Contact Plating :

Tin

Transition Frequency :

7500MHz

Mount :

Surface Mount

Published :

2005

Gain :

12.5dB ~ 19dB

Collector Emitter Voltage (VCEO) :

12V

Emitter Base Voltage (VEBO) :

2V

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Transistor Type :

NPN

ECCN Code :

EAR99

Package / Case :

SC-82A, SOT-343

Power Dissipation :

700mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

LOW NOISE

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Max Collector Current :

150mA

Collector Base Voltage (VCBO) :

20V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Number of Terminations :

4

Base Part Number :

BFP196