BFP196WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Transistor Type :

NPN

Max Power Dissipation :

700mW

Emitter Base Voltage (VEBO) :

2V

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

20V

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Transition Frequency :

7500MHz

Published :

2005

Terminal Form :

Gull wing

Additional Feature :

LOW NOISE

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Number of Pins :

4

Max Collector Current :

150mA

Frequency :

7.5GHz

Collector Emitter Breakdown Voltage :

12V

Max Breakdown Voltage :

12V

Collector Emitter Voltage (VCEO) :

12V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Length :

2mm

Element Configuration :

Single

Package / Case :

SC-82A, SOT-343

Gain :

12.5dB ~ 19dB

Power Dissipation :

700mW

Transistor Element Material :

SILICON

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 8V

Halogen Free :

Halogen Free

Factory Lead Time :

4 Weeks

Height :

900μm

Width :

1.25mm

Base Part Number :

BFP196

Terminal Position :

Dual

Mount :

Surface Mount