BFP196WH6327XTSA1
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- Mfr.Part #
- BFP196WH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-82A, SOT-343
- Datasheet
- Download
- Description
- RF TRANS NPN 12V 7.5GHZ SOT343-4
- Stock
- 305,168
- In Stock ：
- 305,168
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Halogen Free :
- Halogen Free
- Transition Frequency :
- 7500MHz
- Power Dissipation :
- 700mW
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 50mA 8V
- Collector Emitter Breakdown Voltage :
- 12V
- Emitter Base Voltage (VEBO) :
- 2V
- Package / Case :
- SC-82A, SOT-343
- Max Collector Current :
- 150mA
- Transistor Element Material :
- SILICON
- Noise Figure (dB Typ @ f) :
- 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 4
- Additional Feature :
- LOW NOISE
- Width :
- 1.25mm
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BFP196
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Frequency :
- 7.5GHz
- Length :
- 2mm
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 900μm
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Gain :
- 12.5dB ~ 19dB
- Number of Elements :
- 1
- Max Power Dissipation :
- 700mW
- Max Breakdown Voltage :
- 12V
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 12V
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 20V
- Published :
- 2005
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- AMPLIFIER
- Datasheets
- BFP196WH6327XTSA1
BFP196WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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