BFP181E7764HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Frequency :

8GHz

Halogen Free :

Not Halogen Free

Collector Base Voltage (VCBO) :

20V

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Number of Pins :

4

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Emitter Base Voltage (VEBO) :

2V

Current - Collector (Ic) (Max) :

20mA

Voltage - Rated DC :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

12V

Published :

2013

Power Dissipation :

175mW

Number of Elements :

1

Configuration :

Single

ECCN Code :

EAR99

Max Power Dissipation :

175mW

Gain :

17.5dB ~ 21dB

RoHS Status :

ROHS3 Compliant

Transition Frequency :

8000MHz

Current Rating :

20mA

Contact Plating :

Tin

Lead Free :

Lead Free

Base Part Number :

BFP181

Package / Case :

TO-253-4, TO-253AA

Max Collector Current :

20mA