BFP181E7764HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

150°C TJ

Frequency :

8GHz

Voltage - Rated DC :

12V

Emitter Base Voltage (VEBO) :

2V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

20V

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Package / Case :

TO-253-4, TO-253AA

Lead Free :

Lead Free

Transition Frequency :

8000MHz

Polarity/Channel Type :

NPN

Number of Pins :

4

Radiation Hardening :

No

Power Dissipation :

175mW

Factory Lead Time :

4 Weeks

Current - Collector (Ic) (Max) :

20mA

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Published :

2013

Terminal Form :

Gull wing

Mount :

Surface Mount

Number of Terminations :

4

Max Collector Current :

20mA

Transistor Type :

NPN

Gain :

17.5dB ~ 21dB

Current Rating :

20mA

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Halogen Free :

Not Halogen Free

Max Power Dissipation :

175mW

Collector Emitter Voltage (VCEO) :

12V

Number of Elements :

1

Base Part Number :

BFP181