BFP181E7764HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Gain :

17.5dB ~ 21dB

Package / Case :

TO-253-4, TO-253AA

Collector Emitter Voltage (VCEO) :

12V

JESD-609 Code :

e3

Power Dissipation :

175mW

Collector Base Voltage (VCBO) :

20V

Current Rating :

20mA

Number of Pins :

4

Halogen Free :

Not Halogen Free

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Max Collector Current :

20mA

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

20mA

Base Part Number :

BFP181

Published :

2013

Transistor Type :

NPN

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Number of Terminations :

4

Configuration :

Single

Frequency :

8GHz

Lead Free :

Lead Free

Transition Frequency :

8000MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Max Power Dissipation :

175mW

Operating Temperature :

150°C TJ

Voltage - Rated DC :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 70mA 8V

Number of Elements :

1

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

2V