BFP182WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Width :

1.25mm

Gain :

22dB

Number of Elements :

1

Operating Temperature :

150°C TJ

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Base Part Number :

BFP182

hFE Min :

70

Collector Base Voltage (VCBO) :

20V

Continuous Collector Current :

35mA

ECCN Code :

EAR99

Frequency :

8GHz

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

12V

Max Power Dissipation :

250mW

Length :

2mm

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Radiation Hardening :

No

Mount :

Surface Mount

Terminal Form :

Gull wing

Number of Pins :

4

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Published :

2007

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

12V

Collector-Base Capacitance-Max :

0.5pF

Emitter Base Voltage (VEBO) :

2V

Transistor Application :

AMPLIFIER

Max Collector Current :

35mA

Power Dissipation :

250mW

Polarity/Channel Type :

NPN

Packaging :

Tape and Reel (TR)

Height :

800μm

Halogen Free :

Halogen Free

Contact Plating :

Tin

Element Configuration :

Single

Package / Case :

SC-82A, SOT-343

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

Number of Terminations :

4

Transition Frequency :

8000MHz