BFP182WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Collector-Base Capacitance-Max :

0.5pF

JESD-609 Code :

e3

Length :

2mm

Collector Emitter Voltage (VCEO) :

12V

Element Configuration :

Single

Collector Base Voltage (VCBO) :

20V

Factory Lead Time :

4 Weeks

Number of Terminations :

4

Transition Frequency :

8000MHz

Collector Emitter Breakdown Voltage :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

Transistor Element Material :

SILICON

Height :

800μm

Number of Elements :

1

Contact Plating :

Tin

Lead Free :

Lead Free

Width :

1.25mm

Transistor Type :

NPN

hFE Min :

70

Halogen Free :

Halogen Free

Package / Case :

SC-82A, SOT-343

Published :

2007

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Frequency :

8GHz

Gain :

22dB

Terminal Position :

Dual

Mount :

Surface Mount

Power Dissipation :

250mW

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

2V

Max Collector Current :

35mA

Polarity/Channel Type :

NPN

Number of Pins :

4

Base Part Number :

BFP182

Max Power Dissipation :

250mW

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Continuous Collector Current :

35mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99