BFP182WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

12V

Mount :

Surface Mount

Base Part Number :

BFP182

Collector-Base Capacitance-Max :

0.5pF

Frequency :

8GHz

Operating Temperature :

150°C TJ

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

hFE Min :

70

Gain :

22dB

Terminal Position :

Dual

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Power Dissipation :

250mW

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Max Power Dissipation :

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

Collector Base Voltage (VCBO) :

20V

Published :

2007

Max Collector Current :

35mA

Terminal Form :

Gull wing

Package / Case :

SC-82A, SOT-343

Width :

1.25mm

Transistor Type :

NPN

Height :

800μm

Collector Emitter Breakdown Voltage :

12V

Number of Terminations :

4

Number of Pins :

4

Number of Elements :

1

Lead Free :

Lead Free

Element Configuration :

Single

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

2V

Continuous Collector Current :

35mA

Halogen Free :

Halogen Free

Transition Frequency :

8000MHz