BFP182WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation :

250mW

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

12V

Package / Case :

SC-82A, SOT-343

Terminal Position :

Dual

Height :

800μm

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

Base Part Number :

BFP182

Continuous Collector Current :

35mA

Max Power Dissipation :

250mW

Contact Plating :

Tin

Gain :

22dB

Collector-Base Capacitance-Max :

0.5pF

Operating Temperature :

150°C TJ

Max Collector Current :

35mA

JESD-609 Code :

e3

hFE Min :

70

Collector Base Voltage (VCBO) :

20V

Radiation Hardening :

No

Number of Terminations :

4

Terminal Form :

Gull wing

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Lead Free :

Lead Free

Published :

2007

Number of Elements :

1

Transition Frequency :

8000MHz

Collector Emitter Voltage (VCEO) :

12V

Packaging :

Tape and Reel (TR)

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Length :

2mm

Halogen Free :

Halogen Free

Element Configuration :

Single

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Emitter Base Voltage (VEBO) :

2V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Frequency :

8GHz

Mounting Type :

Surface Mount

Width :

1.25mm

ECCN Code :

EAR99