BFP650H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Max Breakdown Voltage :

4.5V

Max Power Dissipation :

500mW

Emitter Base Voltage (VEBO) :

1.2V

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Number of Elements :

1

Frequency :

41GHz

Number of Pins :

4

Frequency - Transition :

37GHz

Collector Emitter Voltage (VCEO) :

4V

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA 3V

Height :

900μm

Package / Case :

SC-82A, SOT-343

Width :

1.25mm

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Number of Terminations :

4

Contact Plating :

Tin

Terminal Position :

Dual

Transistor Element Material :

SILICON GERMANIUM CARBON

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Base Part Number :

BFP650

Operating Temperature :

150°C TJ

Max Collector Current :

150mA

Published :

2005

Length :

2mm

Mount :

Surface Mount

Halogen Free :

Halogen Free

Power Dissipation :

500mW

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Transition Frequency :

42000MHz

JESD-609 Code :

e3

Additional Feature :

LOW NOISE

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

4.5V

Gain :

10.5dB ~ 21.5dB

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

13V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)