BFP650H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

4V

Length :

2mm

JESD-609 Code :

e3

Height :

900μm

Halogen Free :

Halogen Free

Mount :

Surface Mount

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

13V

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON GERMANIUM CARBON

Collector Emitter Breakdown Voltage :

4.5V

Emitter Base Voltage (VEBO) :

1.2V

Frequency :

41GHz

RoHS Status :

ROHS3 Compliant

Transition Frequency :

42000MHz

Contact Plating :

Tin

Number of Terminations :

4

Power Dissipation :

500mW

Transistor Application :

AMPLIFIER

Published :

2005

Polarity/Channel Type :

NPN

Element Configuration :

Single

Operating Temperature :

150°C TJ

Additional Feature :

LOW NOISE

Transistor Type :

NPN

Base Part Number :

BFP650

Terminal Position :

Dual

Gain :

10.5dB ~ 21.5dB

ECCN Code :

EAR99

Max Breakdown Voltage :

4.5V

Number of Elements :

1

Max Power Dissipation :

500mW

Package / Case :

SC-82A, SOT-343

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA 3V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Width :

1.25mm

Max Collector Current :

150mA

Frequency - Transition :

37GHz