BFS483H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

12V

Collector Base Voltage (VCBO) :

20V

Collector Emitter Breakdown Voltage :

12V

Frequency :

8GHz

Halogen Free :

Halogen Free

Package / Case :

6-VSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Type :

2 NPN (Dual)

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Transition Frequency :

8000MHz

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Number of Elements :

2

Max Power Dissipation :

450mW

Polarity :

NPN

Mount :

Surface Mount

Max Breakdown Voltage :

12V

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW NOISE

ECCN Code :

EAR99

Max Collector Current :

65mA

Published :

2013

Number of Terminations :

6

Emitter Base Voltage (VEBO) :

2V

Factory Lead Time :

4 Weeks

Base Part Number :

BFS483

Power Dissipation :

450mW

Gain :

19dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Collector-Base Capacitance-Max :

0.54pF

Reference Standard :

AEC-Q101

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED