BFS481H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

2 NPN (Dual)

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

12V

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 8V

Collector Base Voltage (VCBO) :

20V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Terminal Form :

Gull wing

Base Part Number :

BFS481

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

175mW

Length :

2mm

Emitter Base Voltage (VEBO) :

2V

Number of Pins :

6

Collector-Base Capacitance-Max :

0.4pF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Polarity :

NPN

ECCN Code :

EAR99

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gain :

20dB

Collector Emitter Voltage (VCEO) :

12V

Published :

2007

Contact Plating :

Tin

Frequency :

8GHz

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Max Breakdown Voltage :

12V

Power Dissipation :

175mW

Max Collector Current :

20mA

Halogen Free :

Halogen Free

Package / Case :

6-VSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Height :

800μm

Transition Frequency :

8000MHz

Reference Standard :

AEC-Q101

Width :

1.25mm

Factory Lead Time :

4 Weeks

Number of Terminations :

6

JESD-609 Code :

e3