BFS483H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Max Breakdown Voltage :

12V

Frequency :

8GHz

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Number of Elements :

2

Base Part Number :

BFS483

Additional Feature :

LOW NOISE

Lead Free :

Lead Free

ECCN Code :

EAR99

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

12V

Package / Case :

6-VSSOP, SC-88, SOT-363

Transition Frequency :

8000MHz

Gain :

19dB

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Collector Base Voltage (VCBO) :

20V

Reference Standard :

AEC-Q101

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

450mW

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

12V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

2V

Number of Pins :

6

Max Power Dissipation :

450mW

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Collector-Base Capacitance-Max :

0.54pF

Max Collector Current :

65mA

Published :

2013

Polarity :

NPN

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V