BFS483H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Max Breakdown Voltage :

12V

Published :

2013

RoHS Status :

ROHS3 Compliant

Frequency :

8GHz

Terminal Form :

Gull wing

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Factory Lead Time :

4 Weeks

Max Collector Current :

65mA

Transistor Element Material :

SILICON

Transition Frequency :

8000MHz

Package / Case :

6-VSSOP, SC-88, SOT-363

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 NPN (Dual)

Gain :

19dB

Power Dissipation :

450mW

Collector Base Voltage (VCBO) :

20V

Collector Emitter Breakdown Voltage :

12V

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Number of Pins :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Additional Feature :

LOW NOISE

Number of Terminations :

6

JESD-609 Code :

e3

Collector-Base Capacitance-Max :

0.54pF

Emitter Base Voltage (VEBO) :

2V

Base Part Number :

BFS483

Collector Emitter Voltage (VCEO) :

12V

Max Power Dissipation :

450mW

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Operating Temperature :

150°C TJ