BFS483H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

6-VSSOP, SC-88, SOT-363

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

12V

Emitter Base Voltage (VEBO) :

2V

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

JESD-609 Code :

e3

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Base Part Number :

BFS483

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Elements :

2

Factory Lead Time :

4 Weeks

Frequency :

8GHz

Operating Temperature :

150°C TJ

Published :

2013

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Transition Frequency :

8000MHz

Power Dissipation :

450mW

Collector-Base Capacitance-Max :

0.54pF

Gain :

19dB

Max Collector Current :

65mA

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Max Breakdown Voltage :

12V

Collector Base Voltage (VCBO) :

20V

Transistor Type :

2 NPN (Dual)

Reference Standard :

AEC-Q101

Max Power Dissipation :

450mW

Additional Feature :

LOW NOISE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

12V

Terminal Form :

Gull wing