BFS483H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

LOW NOISE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gain :

19dB

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Reference Standard :

AEC-Q101

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

2V

Max Collector Current :

65mA

Halogen Free :

Halogen Free

Transistor Type :

2 NPN (Dual)

Transition Frequency :

8000MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Transistor Application :

AMPLIFIER

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

12V

Number of Terminations :

6

Polarity :

NPN

Power Dissipation :

450mW

Contact Plating :

Tin

Max Breakdown Voltage :

12V

Transistor Element Material :

SILICON

Frequency :

8GHz

Published :

2013

JESD-609 Code :

e3

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Package / Case :

6-VSSOP, SC-88, SOT-363

Base Part Number :

BFS483

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

20V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Mount :

Surface Mount

Max Power Dissipation :

450mW

Collector-Base Capacitance-Max :

0.54pF