BFS481H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Length :

2mm

Max Power Dissipation :

175mW

Lead Free :

Lead Free

Frequency :

8GHz

Collector Emitter Voltage (VCEO) :

12V

Power Dissipation :

175mW

Number of Pins :

6

Number of Elements :

2

Transition Frequency :

8000MHz

Operating Temperature :

150°C TJ

Gain :

20dB

Published :

2007

Max Collector Current :

20mA

Height :

800μm

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

2V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Width :

1.25mm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Contact Plating :

Tin

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

BFS481

Reference Standard :

AEC-Q101

Number of Terminations :

6

Transistor Type :

2 NPN (Dual)

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

20V

Max Breakdown Voltage :

12V

Package / Case :

6-VSSOP, SC-88, SOT-363

Collector Emitter Breakdown Voltage :

12V

ECCN Code :

EAR99

Collector-Base Capacitance-Max :

0.4pF