BFS481H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Factory Lead Time :

4 Weeks

Package / Case :

6-VSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Collector-Base Capacitance-Max :

0.4pF

Power Dissipation :

175mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Base Part Number :

BFS481

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

12V

Number of Elements :

2

Height :

800μm

Gain :

20dB

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Max Collector Current :

20mA

Published :

2007

Length :

2mm

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Mount :

Surface Mount

Polarity :

NPN

Max Breakdown Voltage :

12V

ECCN Code :

EAR99

Transistor Type :

2 NPN (Dual)

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

20V

Packaging :

Tape and Reel (TR)

Transition Frequency :

8000MHz

Number of Pins :

6

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

2V

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Frequency :

8GHz

Width :

1.25mm

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 8V

Collector Emitter Voltage (VCEO) :

12V

Mounting Type :

Surface Mount

Max Power Dissipation :

175mW