BFP420H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Power Dissipation :

210mW

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

1.5V

JESD-30 Code :

R-PDSO-G4

Noise Figure (dB Typ @ f) :

1.1dB @ 1.8GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 4V

JESD-609 Code :

e3

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Transistor Type :

NPN

Radiation Hardening :

No

Mounting Type :

Surface Mount

hFE Min :

60

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Number of Terminations :

4

Factory Lead Time :

6 Weeks

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

160mW

REACH SVHC :

No SVHC

Number of Pins :

3

Number of Elements :

1

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

5V

Halogen Free :

Halogen Free

Termination :

SMD/SMT

Published :

2003

Transistor Application :

AMPLIFIER

Height :

1mm

Current - Collector (Ic) (Max) :

35mA

Collector Base Voltage (VCBO) :

15V

Gain :

21dB

Mount :

Surface Mount

Max Breakdown Voltage :

5V

Transition Frequency :

25000MHz

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

25GHz

Collector Emitter Voltage (VCEO) :

15V

Max Collector Current :

60mA

Package / Case :

SC-82A, SOT-343

Base Part Number :

BFP420

Test Frequency :

1.8GHz