BFP450H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Height :

800μm

Length :

2mm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency :

24GHz

Transistor Element Material :

SILICON GERMANIUM CARBON

Power Dissipation :

500mW

Collector Base Voltage (VCBO) :

15V

Power - Max :

450mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA 4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Transition Frequency :

42000MHz

Width :

1.25mm

Number of Pins :

4

Transistor Application :

AMPLIFIER

Max Collector Current :

100mA

Max Power Dissipation :

450mW

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Terminations :

4

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

1.5V

Published :

2005

Collector Emitter Breakdown Voltage :

5V

Terminal Finish :

Tin (Sn)

Package / Case :

SC-82A, SOT-343

Transistor Type :

NPN

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

4.5V

Halogen Free :

Halogen Free

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

1.25dB @ 1.8GHz

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Additional Feature :

LOW NOISE

Operating Temperature :

150°C TJ

Base Part Number :

BFP450

Number of Elements :

1

Max Breakdown Voltage :

5V

Gain :

15.5dB