BFP450H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Width :

1.25mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA 4V

Published :

2005

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

1.25dB @ 1.8GHz

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Halogen Free :

Halogen Free

Transistor Application :

AMPLIFIER

Factory Lead Time :

4 Weeks

Package / Case :

SC-82A, SOT-343

Length :

2mm

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

1.5V

Transition Frequency :

42000MHz

Frequency :

24GHz

Collector Emitter Voltage (VCEO) :

4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

15V

Additional Feature :

LOW NOISE

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

500mW

Mount :

Surface Mount

Max Breakdown Voltage :

5V

Transistor Element Material :

SILICON GERMANIUM CARBON

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Base Part Number :

BFP450

Collector Emitter Breakdown Voltage :

5V

Max Power Dissipation :

450mW

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Element Configuration :

Single

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Gain :

15.5dB

Power - Max :

450mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

4

Height :

800μm

Number of Elements :

1

Terminal Form :

Gull wing

Lead Free :

Lead Free