BFP450H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

15.5dB

JESD-609 Code :

e3

Transistor Element Material :

SILICON GERMANIUM CARBON

Published :

2005

Length :

2mm

Emitter Base Voltage (VEBO) :

1.5V

Max Collector Current :

100mA

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

5V

Polarity/Channel Type :

NPN

Halogen Free :

Halogen Free

Frequency :

24GHz

Transistor Application :

AMPLIFIER

Power Dissipation :

500mW

Max Power Dissipation :

450mW

Transition Frequency :

42000MHz

Power - Max :

450mW

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC-82A, SOT-343

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA 4V

Additional Feature :

LOW NOISE

Width :

1.25mm

Element Configuration :

Single

Number of Terminations :

4

ECCN Code :

EAR99

Terminal Form :

Gull wing

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

800μm

Noise Figure (dB Typ @ f) :

1.25dB @ 1.8GHz

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

4.5V

Collector Base Voltage (VCBO) :

15V

Base Part Number :

BFP450

Max Breakdown Voltage :

5V

Mounting Type :

Surface Mount

Number of Pins :

4

Number of Elements :

1

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)