BFP410H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

5V

Terminal Position :

Dual

Reference Standard :

AEC-Q101

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Gain :

21.5dB

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

13V

Number of Elements :

1

Package / Case :

SC-82A, SOT-343

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 13mA 2V

Noise Figure (dB Typ @ f) :

1.2dB @ 2GHz

Highest Frequency Band :

L B

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

4.5V

Number of Pins :

4

Configuration :

Single

Max Power Dissipation :

150mW

Max Collector Current :

40mA

Published :

2003

Polarity/Channel Type :

NPN

Number of Terminations :

4

Transition Frequency :

25000MHz

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Transistor Element Material :

SILICON

Frequency - Transition :

25GHz

Collector-Base Capacitance-Max :

0.17pF

Power - Max :

150mW