BFP410H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

4.5V

Highest Frequency Band :

L B

Number of Pins :

4

Published :

2003

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 13mA 2V

Package / Case :

SC-82A, SOT-343

JESD-609 Code :

e3

Power - Max :

150mW

Halogen Free :

Halogen Free

Configuration :

Single

Noise Figure (dB Typ @ f) :

1.2dB @ 2GHz

Max Power Dissipation :

150mW

Collector Base Voltage (VCBO) :

13V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Mount :

Surface Mount

Terminal Form :

Gull wing

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Number of Elements :

1

Transition Frequency :

25000MHz

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

4

Reference Standard :

AEC-Q101

Transistor Element Material :

SILICON

Contact Plating :

Tin

Max Collector Current :

40mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gain :

21.5dB

Lead Free :

Lead Free

Collector-Base Capacitance-Max :

0.17pF

Factory Lead Time :

4 Weeks

Frequency - Transition :

25GHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED