BFP405H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Halogen Free :

Halogen Free

Voltage - Collector Emitter Breakdown (Max) :

5V

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

1.5V

Configuration :

Single

Noise Figure (dB Typ @ f) :

1.25dB @ 1.8GHz

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-G4

hFE Min :

50

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Number of Terminations :

4

Terminal Form :

Gull wing

Test Frequency :

1.8GHz

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Transistor Type :

NPN

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Number of Elements :

1

Published :

2005

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

4.5V

Base Part Number :

BFP405

Collector Emitter Voltage (VCEO) :

4.5V

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Power Dissipation :

75mW

Package / Case :

SC-82A, SOT-343

REACH SVHC :

No SVHC

Max Collector Current :

10mA

Transistor Element Material :

SILICON

Max Breakdown Voltage :

5V

Collector Base Voltage (VCBO) :

15V

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Frequency :

25GHz

Number of Pins :

3

Gain :

23dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 4V

Terminal Position :

Dual

Max Power Dissipation :

55mW

Transition Frequency :

25000MHz

Current - Collector (Ic) (Max) :

25mA

Mount :

Surface Mount