BFR93AWH6327XTSA1
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- Mfr.Part #
- BFR93AWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- RF TRANS NPN 12V 6GHZ SOT323-3
- Stock
- 401,984
- In Stock ：
- 401,984
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 12V
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Noise Figure (dB Typ @ f) :
- 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Terminal Form :
- Gull wing
- Max Collector Current :
- 90mA
- Contact Plating :
- Tin
- Base Part Number :
- BFR93
- Max Power Dissipation :
- 300mW
- Package / Case :
- SC-70, SOT-323
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Transition Frequency :
- 6000MHz
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 2V
- Transistor Application :
- AMPLIFIER
- Published :
- 2013
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 30mA 8V
- Frequency :
- 6GHz
- Gain :
- 10.5dB ~ 15.5dB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 12V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 12V
- Collector-Base Capacitance-Max :
- 0.8pF
- Factory Lead Time :
- 4 Weeks
- Datasheets
- BFR93AWH6327XTSA1
BFR93AWH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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