BFR92PE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Width :

1.3mm

JESD-609 Code :

e3

Max Power Dissipation :

280mW

Gain :

10.5dB ~ 16dB

hFE Min :

40

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

20V

ECCN Code :

EAR99

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Transition Frequency :

5000MHz

Terminal Position :

Dual

Transistor Type :

NPN

Base Part Number :

BFR92

Operating Temperature :

150°C TJ

Height :

1mm

Published :

1998

Number of Pins :

3

Emitter Base Voltage (VEBO) :

2.5V

Collector-Base Capacitance-Max :

0.6pF

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

280mW

Frequency :

5GHz

REACH SVHC :

No SVHC

Configuration :

Single

Number of Elements :

1

Test Frequency :

900MHz

Current Rating :

45mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

15V

Voltage - Rated DC :

15V

Collector Emitter Breakdown Voltage :

15V

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Number of Terminations :

3

Termination :

SMD/SMT

Halogen Free :

Not Halogen Free

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Max Collector Current :

45mA

Contact Plating :

Tin

Length :

2.9mm

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz