BFR93A215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

300mW

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 5V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

35mA

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Frequency - Transition :

6GHz

Pin Count :

3

JEDEC-95 Code :

TO-236AB

HTS Code :

8541.21.00.75

JESD-609 Code :

e3

Published :

1995

Reference Standard :

CECC

Power Dissipation Ambient-Max :

0.3W

Noise Figure (dB Typ @ f) :

1.9dB ~ 3dB @ 1GHz ~ 2GHz

Base Part Number :

BFR93

Voltage - Collector Emitter Breakdown (Max) :

12V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

175°C TJ

Power Dissipation-Max (Abs) :

0.35W

Qualification Status :

Not Qualified

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Highest Frequency Band :

L B

Surface Mount :

yes

Number of Elements :

1

Number of Terminations :

3

Transition Frequency :

6000MHz

Packaging :

Tape and Reel (TR)

Configuration :

Single

Transistor Type :

NPN

Additional Feature :

LOW NOISE

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40