BFR93A215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 5V

Configuration :

Single

JEDEC-95 Code :

TO-236AB

Packaging :

Tape and Reel (TR)

Highest Frequency Band :

L B

Terminal Position :

Dual

Number of Terminations :

3

Frequency - Transition :

6GHz

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Additional Feature :

LOW NOISE

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

0.35W

Qualification Status :

Not Qualified

Power - Max :

300mW

JESD-609 Code :

e3

Reference Standard :

CECC

Polarity/Channel Type :

NPN

Pin Count :

3

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G3

Power Dissipation Ambient-Max :

0.3W

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

35mA

Published :

1995

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

6000MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Base Part Number :

BFR93

Transistor Element Material :

SILICON

Operating Temperature :

175°C TJ

Voltage - Collector Emitter Breakdown (Max) :

12V

Noise Figure (dB Typ @ f) :

1.9dB ~ 3dB @ 1GHz ~ 2GHz

Terminal Form :

Gull wing