BFR93AE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Lead Free :

Lead Free

Max Power Dissipation :

300mW

Power Dissipation :

300mW

Gain :

9.5dB ~ 14.5dB

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Transistor Type :

NPN

Contact Plating :

Tin

Base Part Number :

BFR93

Terminal Form :

Gull wing

Max Collector Current :

90mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector (Ic) (Max) :

90mA

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Mounting Type :

Surface Mount

Transition Frequency :

6000MHz

Height :

1mm

Radiation Hardening :

No

Width :

1.3mm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Pins :

3

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Emitter Base Voltage (VEBO) :

2V

Current Rating :

90mA

Number of Terminations :

3

Element Configuration :

Single

Collector Base Voltage (VCBO) :

20V

Voltage - Rated DC :

12V

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Mount :

Surface Mount

Number of Elements :

1

Operating Temperature :

150°C TJ

Frequency :

6GHz

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Collector-Base Capacitance-Max :

0.9pF

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

12V

Halogen Free :

Not Halogen Free

Length :

2.9mm