BFR93AE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Length :

2.9mm

Current - Collector (Ic) (Max) :

90mA

Voltage - Rated DC :

12V

Collector Emitter Voltage (VCEO) :

12V

Frequency :

6GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Number of Pins :

3

Collector Base Voltage (VCBO) :

20V

Polarity/Channel Type :

NPN

Base Part Number :

BFR93

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Current Rating :

90mA

Collector-Base Capacitance-Max :

0.9pF

Terminal Position :

Dual

Width :

1.3mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Max Collector Current :

90mA

Published :

1999

Element Configuration :

Single

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Gain :

9.5dB ~ 14.5dB

Max Power Dissipation :

300mW

Number of Elements :

1

Halogen Free :

Not Halogen Free

Power Dissipation :

300mW

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

2V

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Pbfree Code :

yes

Transition Frequency :

6000MHz

Terminal Form :

Gull wing

Height :

1mm

Operating Temperature :

150°C TJ