BFR93A,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation Ambient-Max :

0.3W

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Additional Feature :

LOW NOISE

Power Dissipation-Max (Abs) :

0.35W

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-236AB

Peak Reflow Temperature (Cel) :

260

Current - Collector (Ic) (Max) :

35mA

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

175°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 5V

Reference Standard :

CECC

Mounting Type :

Surface Mount

Base Part Number :

BFR93

Voltage - Collector Emitter Breakdown (Max) :

12V

Qualification Status :

Not Qualified

Frequency - Transition :

6GHz

Transistor Type :

NPN

Number of Terminations :

3

Power - Max :

300mW

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Configuration :

Single

Highest Frequency Band :

L B

Polarity/Channel Type :

NPN

Number of Elements :

1

Terminal Form :

Gull wing

Noise Figure (dB Typ @ f) :

1.9dB ~ 3dB @ 1GHz ~ 2GHz

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Transition Frequency :

6000MHz

Published :

1995

Pin Count :

3

Terminal Finish :

Tin (Sn)

HTS Code :

8541.21.00.75