BFR92PE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation :

280mW

Mount :

Surface Mount

Contact Plating :

Tin

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

hFE Min :

40

Collector Emitter Voltage (VCEO) :

15V

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Termination :

SMD/SMT

Published :

1998

Transition Frequency :

5000MHz

Collector Base Voltage (VCBO) :

20V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

Single

Collector-Base Capacitance-Max :

0.6pF

JESD-609 Code :

e3

Voltage - Rated DC :

15V

Emitter Base Voltage (VEBO) :

2.5V

Current Rating :

45mA

Width :

1.3mm

Gain :

10.5dB ~ 16dB

RoHS Status :

ROHS3 Compliant

Max Collector Current :

45mA

Polarity/Channel Type :

NPN

Number of Pins :

3

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1mm

Terminal Form :

Gull wing

Number of Elements :

1

Length :

2.9mm

Noise Figure (dB Typ @ f) :

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

15V

Packaging :

Tape and Reel (TR)

Test Frequency :

900MHz

Frequency :

5GHz

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Radiation Hardening :

No

Max Power Dissipation :

280mW

Terminal Position :

Dual

Base Part Number :

BFR92

Number of Terminations :

3

Halogen Free :

Not Halogen Free