BFP640H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

4

Collector Base Voltage (VCBO) :

13V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

50mA

Collector Emitter Breakdown Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Configuration :

Single

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Lead Free :

Lead Free

Transistor Element Material :

SILICON GERMANIUM

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

200mW

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

1.2V

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

4V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Collector-Base Capacitance-Max :

0.2pF

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Frequency :

40GHz

Mounting Type :

Surface Mount

Max Power Dissipation :

200mW

ECCN Code :

EAR99

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Number of Elements :

1

Base Part Number :

BFP640

Number of Terminations :

4

Published :

2005

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Transition Frequency :

40000MHz

Polarity/Channel Type :

NPN

Gain :

12.5dB

Package / Case :

SC-82A, SOT-343

Max Breakdown Voltage :

4.5V

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Transistor Type :

NPN

Terminal Position :

Dual