BFP640H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Breakdown Voltage :

4V

Transistor Element Material :

SILICON GERMANIUM

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Package / Case :

SC-82A, SOT-343

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Emitter Base Voltage (VEBO) :

1.2V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

200mW

Number of Terminations :

4

Number of Elements :

1

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Max Collector Current :

50mA

Base Part Number :

BFP640

Terminal Position :

Dual

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Collector-Base Capacitance-Max :

0.2pF

Lead Free :

Lead Free

Max Breakdown Voltage :

4.5V

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Voltage (VCEO) :

4V

Transition Frequency :

40000MHz

Power Dissipation :

200mW

Number of Pins :

4

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Published :

2005

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

40GHz

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

13V

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Gain :

12.5dB