BFP640ESDH6327XTSA1
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- Mfr.Part #
- BFP640ESDH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-82A, SOT-343
- Datasheet
- Download
- Description
- RF TRANS NPN 4.7V 46GHZ SOT343
- Stock
- 153,299
- In Stock ：
- 153,299
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Contact Plating :
- Tin
- Max Collector Current :
- 50mA
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 4.7V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 4.8V
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- BFP640
- Transition Frequency :
- 45000MHz
- Published :
- 2003
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON GERMANIUM CARBON
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Configuration :
- Single
- Gain :
- 7dB ~ 30dB
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 46GHz
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 4.7V
- Package / Case :
- SC-82A, SOT-343
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Noise Figure (dB Typ @ f) :
- 0.6dB ~ 2dB @ 150MHz ~ 10GHz
- Collector Emitter Voltage (VCEO) :
- 4.1V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 30mA 3V
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PDSO-G4
- Datasheets
- BFP640ESDH6327XTSA1
BFP640ESDH6327XTSA1 Documents
BFP640ESDH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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