BFP640ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Base Voltage (VCBO) :

4.8V

Base Part Number :

BFP640

ECCN Code :

EAR99

Published :

2003

Operating Temperature :

150°C TJ

Frequency :

46GHz

Factory Lead Time :

12 Weeks

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

4.7V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G4

Package / Case :

SC-82A, SOT-343

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

4.1V

Mounting Type :

Surface Mount

Number of Terminations :

4

Gain :

7dB ~ 30dB

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Lead Free :

Lead Free

Power Dissipation :

200mW

Transition Frequency :

45000MHz

Terminal Form :

Gull wing

JESD-609 Code :

e3

Max Power Dissipation :

200mW

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Max Collector Current :

50mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Breakdown Voltage :

4.7V

Transistor Element Material :

SILICON GERMANIUM CARBON

Configuration :

Single

Noise Figure (dB Typ @ f) :

0.6dB ~ 2dB @ 150MHz ~ 10GHz

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin