BFP620H7764XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON GERMANIUM CARBON

Collector-Base Capacitance-Max :

0.2pF

Package / Case :

SC-82A, SOT-343

Power Rating :

1W

Operating Temperature :

150°C TJ

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

2.3V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

185mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

2.8V

Max Breakdown Voltage :

2.8V

Transition Frequency :

65000MHz

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Max Collector Current :

80mA

Gain :

21.5dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA 1.5V

Number of Pins :

4

Frequency :

65GHz

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

1.2V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Elements :

1

Max Repetitive Reverse Voltage (Vrrm) :

15V

Hold Current :

100mA

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Base Part Number :

BFP620

ECCN Code :

EAR99

Configuration :

Single

Additional Feature :

LOW NOISE

Power Dissipation :

185mW

Polarity/Channel Type :

NPN

Halogen Free :

Halogen Free

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2005

Collector Base Voltage (VCBO) :

7.5V

Transistor Application :

AMPLIFIER