BFP620H7764XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency :

65GHz

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

2.8V

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA 1.5V

Collector-Base Capacitance-Max :

0.2pF

Number of Elements :

1

Operating Temperature :

150°C TJ

Factory Lead Time :

4 Weeks

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Configuration :

Single

Published :

2005

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

7.5V

Power Rating :

1W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

2.3V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Gain :

21.5dB

Package / Case :

SC-82A, SOT-343

ECCN Code :

EAR99

Transistor Element Material :

SILICON GERMANIUM CARBON

Max Power Dissipation :

185mW

Max Breakdown Voltage :

2.8V

Mount :

Surface Mount

Transition Frequency :

65000MHz

Max Repetitive Reverse Voltage (Vrrm) :

15V

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Emitter Base Voltage (VEBO) :

1.2V

Power Dissipation :

185mW

Additional Feature :

LOW NOISE

Max Collector Current :

80mA

Hold Current :

100mA

Terminal Position :

Dual

Base Part Number :

BFP620

Number of Pins :

4