BFR106,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA 9V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Published :

1997

Terminal Position :

Dual

Transition Frequency :

5000MHz

Terminal Form :

Gull wing

Additional Feature :

LOW NOISE

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation Ambient-Max :

0.5W

Terminal Finish :

Tin (Sn)

Noise Figure (dB Typ @ f) :

3.5dB @ 800MHz

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

5GHz

Transistor Type :

NPN

Configuration :

Single

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Number of Terminations :

3

Current - Collector (Ic) (Max) :

100mA

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

0.35W

JESD-609 Code :

e3

Operating Temperature :

175°C TJ

Reference Standard :

CECC

Transistor Element Material :

SILICON

Base Part Number :

BFR106

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

Transistor Application :

AMPLIFIER

Voltage - Collector Emitter Breakdown (Max) :

15V

Polarity/Channel Type :

NPN

Pin Count :

3

Power - Max :

500mW