BFR106,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

500mW

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 50mA 9V

Qualification Status :

Not Qualified

Power Dissipation Ambient-Max :

0.5W

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

15V

HTS Code :

8541.21.00.75

Terminal Form :

Gull wing

Number of Elements :

1

Configuration :

Single

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Frequency - Transition :

5GHz

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Surface Mount :

yes

Base Part Number :

BFR106

Noise Figure (dB Typ @ f) :

3.5dB @ 800MHz

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Terminal Position :

Dual

Reference Standard :

CECC

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW NOISE

Operating Temperature :

175°C TJ

Packaging :

Tape and Reel (TR)

Transition Frequency :

5000MHz

Power Dissipation-Max (Abs) :

0.35W

Pin Count :

3

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Published :

1997

JESD-30 Code :

R-PDSO-G3

Time@Peak Reflow Temperature-Max (s) :

40