BFR30LT1G

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

JESD-609 Code :

e3

Current - Drain (Idss) @ Vds (Vgs=0) :

4mA @ 10V

Voltage - Rated DC :

25V

FET Technology :

JUNCTION

FET Type :

N-Channel

Published :

2009

Max Power Dissipation :

225mW

Pbfree Code :

yes

Termination :

SMD/SMT

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Terminal Form :

Gull wing

Number of Terminations :

3

Qualification Status :

Not Qualified

Pin Count :

3

Contact Plating :

Tin

Weight :

1.437803g

Feedback Cap-Max (Crss) :

1.5 pF

Continuous Drain Current (ID) :

10mA

Transistor Element Material :

SILICON

Operating Mode :

Depletion Mode

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

25V

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

5pF @ 10V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Current Rating :

1mA

REACH SVHC :

No SVHC

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Voltage - Cutoff (VGS off) @ Id :

5V @ 0.5nA

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Base Part Number :

BFR30