BFR30,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - JFETs

Transistor Element Material :

SILICON

Surface Mount :

yes

FET Technology :

JUNCTION

Current - Drain (Idss) @ Vds (Vgs=0) :

4mA @ 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Current Drain (Id) - Max :

10mA

Configuration :

Single

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Operating Mode :

Depletion Mode

Pin Count :

3

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4pF @ 10V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Feedback Cap-Max (Crss) :

1.5 pF

Power Dissipation-Max (Abs) :

0.3W

Published :

1997

Base Part Number :

BFR30

Terminal Position :

Dual

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

25V

Voltage - Cutoff (VGS off) @ Id :

5V @ 0.5nA

Power - Max :

250mW

Packaging :

Tape and Reel (TR)

Number of Elements :

1

HTS Code :

8541.21.00.95

Transistor Application :

AMPLIFIER