MMBFJ177LT1G

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Radiation Hardening :

No

Voltage - Rated DC :

-25V

Number of Pins :

3

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Width :

1.4mm

Terminal Position :

Dual

Transistor Element Material :

SILICON

Voltage - Cutoff (VGS off) @ Id :

800mV @ 10nA

Power Dissipation :

225mW

ECCN Code :

EAR99

Surface Mount :

yes

Resistance - RDS(On) :

300Ohm

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

225mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Technology :

JUNCTION

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Drain to Source Resistance :

300Ohm

FET Type :

P-Channel

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Operating Mode :

Depletion Mode

Operating Temperature :

-55°C~150°C TJ

Feedback Cap-Max (Crss) :

5.5 pF

Weight :

1.437803g

REACH SVHC :

No SVHC

Pin Count :

3

Pbfree Code :

yes

Published :

2005

Number of Elements :

1

Base Part Number :

MBFJ177

Length :

3.04mm

Height :

1.01mm

Terminal Form :

Gull wing

Transistor Application :

Chopper

Breakdown Voltage :

30V

Current Rating :

-20mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

25V

Number of Terminations :

3

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

20mA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Drain (Idss) @ Vds (Vgs=0) :

1.5mA @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V VGS