MMBF170
- Mfr.Part #
- MMBF170
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 18,391
- In Stock :
- 18,391
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 2.1 V
- Turn-Off Delay Time :
- 10 ns
- Rds On Max :
- 5 Ω
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Published :
- 2010
- Resistance :
- 5Ohm
- Voltage - Rated DC :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Max Operating Temperature :
- 150°C
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 930μm
- Mount :
- Surface Mount
- Threshold Voltage :
- 2.1V
- Drain to Source Voltage (Vdss) :
- 60V
- Dual Supply Voltage :
- 60V
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Termination :
- SMD/SMT
- Weight :
- 30mg
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 60V
- Drain to Source Resistance :
- 5Ohm
- Current Rating :
- 500mA
- Length :
- 2.92mm
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 40pF @ 10V
- Power Dissipation-Max :
- 300mW Ta
- Radiation Hardening :
- No
- Width :
- 3.05mm
- Supplier Device Package :
- SOT-23
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 200mA, 10V
- Turn On Delay Time :
- 10 ns
- Continuous Drain Current (ID) :
- 500mA
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 40pF
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Datasheets
- MMBF170

N-Channel Tape & Reel (TR) 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-236-3, SC-59, SOT-23-3
The MMBF170 N-Channel MOSFET is incorperated with Onsemi's patented, high cell density, DMOS technology. The MMBF170 has been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. The MMBF170 is suitable for most applications requiring up to 500 mA DC.
MMBF170 Transistor Features
Low On-Resistance and High Density
Low Gate Threshold Voltage
Low Input Capacitance
High Saturation Current Capability
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant
MMBF170 Transistor Applications
Power MOSFET Gate Drivers
Switching
Servo Motor Control
Amplifiers
Safety Devices
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