EPC2038

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Mfr.Part #
EPC2038
Manufacturer
EPC
Package / Case
Die
Datasheet
Download
Description
GANFET N-CH 100V 500MA DIE
Stock
3,872
In Stock :
3,872

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Manufacturer :
EPC
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
500mA Ta
Operating Temperature :
-40°C~150°C TJ
Min Operating Temperature :
-40°C
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
3.3Ohm @ 50mA, 5V
Height :
815μm
Vgs (Max) :
+6V, -4V
Max Junction Temperature (Tj) :
150°C
Max Operating Temperature :
150°C
Mounting Type :
Surface Mount
Package / Case :
Die
FET Type :
N-Channel
Drain to Source Resistance :
2.1Ohm
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
8.4pF @ 50V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
2.5V @ 20μA
Continuous Drain Current (ID) :
500mA
Supplier Device Package :
Die
Drain to Source Voltage (Vdss) :
100V
Drain to Source Breakdown Voltage :
100V
Gate Charge (Qg) (Max) @ Vgs :
0.044nC @ 5V
Series :
eGaN®
Drive Voltage (Max Rds On,Min Rds On) :
5V
Factory Lead Time :
12 Weeks
Gate to Source Voltage (Vgs) :
6V
Datasheets
EPC2038
Introducing Transistors - FETs, MOSFETs - Single EPC EPC2038 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:Die, Number of Channels:1, EPC2038 pinout, EPC2038 datasheet PDF, EPC2038 amp .Beyond Transistors - FETs, MOSFETs - Single EPC EPC2038 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

EPC EPC2038


N-Channel Tape & Reel (TR) 3.3Ohm @ 50mA, 5V +6V, -4V 8.4pF @ 50V 0.044nC @ 5V 100V Die

EPC2038 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8.4pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 2.1Ohm.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 6VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V).

EPC2038 Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 100V voltage
single MOSFETs transistor is 2.1Ohm
a 100V drain to source voltage (Vdss)


EPC2038 Applications


There are a lot of EPC
EPC2038 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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