BFP620FH7764XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Collector Emitter Breakdown Voltage :

2.8V

Package / Case :

4-SMD, Flat Leads

Transistor Element Material :

SILICON GERMANIUM

Published :

2005

Mount :

Surface Mount

Number of Terminations :

4

Lead Free :

Lead Free

Reference Standard :

AEC-Q101

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Number of Elements :

1

Number of Pins :

4

Configuration :

Single

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

185mW

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

2.3V

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Transition Frequency :

65000MHz

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Max Power Dissipation :

185mW

Frequency - Transition :

65GHz

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Highest Frequency Band :

C B

Contact Plating :

Tin

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Base Part Number :

BFP620

Collector-Base Capacitance-Max :

0.2pF

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

80mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA 1.5V

Max Breakdown Voltage :

2.8V

Collector Base Voltage (VCBO) :

7.5V

Gain :

21dB ~ 10dB