BFP620FH7764XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Gain :

21dB ~ 10dB

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Collector Emitter Breakdown Voltage :

2.8V

Operating Temperature :

150°C TJ

Contact Plating :

Tin

Halogen Free :

Halogen Free

Published :

2005

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

4

Max Collector Current :

80mA

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Transistor Application :

AMPLIFIER

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

2.3V

Transistor Element Material :

SILICON GERMANIUM

Max Power Dissipation :

185mW

Highest Frequency Band :

C B

Transition Frequency :

65000MHz

Package / Case :

4-SMD, Flat Leads

Collector-Base Capacitance-Max :

0.2pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

2.8V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Transistor Type :

NPN

Number of Pins :

4

Factory Lead Time :

8 Weeks

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

7.5V

Frequency - Transition :

65GHz

Base Part Number :

BFP620

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA 1.5V

Configuration :

Single

Polarity/Channel Type :

NPN

Mount :

Surface Mount

JESD-609 Code :

e3

Power - Max :

185mW