BFP620FH7764XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Lead Free :

Lead Free

Configuration :

Single

Transistor Type :

NPN

Gain :

21dB ~ 10dB

Package / Case :

4-SMD, Flat Leads

Frequency - Transition :

65GHz

Collector Emitter Voltage (VCEO) :

2.3V

Collector Base Voltage (VCBO) :

7.5V

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Collector-Base Capacitance-Max :

0.2pF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Published :

2005

Highest Frequency Band :

C B

Max Collector Current :

80mA

Max Power Dissipation :

185mW

Factory Lead Time :

8 Weeks

Number of Elements :

1

Transistor Application :

AMPLIFIER

Mount :

Surface Mount

Base Part Number :

BFP620

Number of Pins :

4

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Max Breakdown Voltage :

2.8V

Transition Frequency :

65000MHz

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Power - Max :

185mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA 1.5V

Polarity/Channel Type :

NPN

Number of Terminations :

4

Collector Emitter Breakdown Voltage :

2.8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON GERMANIUM

Halogen Free :

Halogen Free

Operating Temperature :

150°C TJ