BFP640E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

Power - Max :

200mW

Transition Frequency :

42

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Mounting Type :

Surface Mount

Product Status :

Active

Package / Case :

SC-82A, SOT-343

Reach Compliance Code :

Unknown

Package :

Bulk

Polarity/Channel Type :

NPN

Supplier Device Package :

PG-SOT343-4

Transistor Polarity :

NPN

Operating Temperature :

150°C (TJ)

Collector Current-Max (IC) :

0.05 A

Manufacturer :

Infineon Technologies AG

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.2 W

ECCN Code :

EAR99

Frequency - Transition :

40GHz

Transistor Type :

NPN

Subcategory :

Other Transistors

Continuous Collector Current :

50

Power Dissipation :

200

Series :

-

Gain :

24dB

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA, 3V

DC Current Gain-Min (hFE) :

110