BFP640ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON GERMANIUM CARBON

Collector Base Voltage (VCBO) :

4.8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Frequency :

46GHz

Transition Frequency :

45000MHz

Collector Emitter Breakdown Voltage :

4.7V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Contact Plating :

Tin

Power Dissipation :

200mW

Number of Elements :

1

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Base Part Number :

BFP640

Published :

2003

JESD-30 Code :

R-PDSO-G4

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Max Breakdown Voltage :

4.7V

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

0.6dB ~ 2dB @ 150MHz ~ 10GHz

Max Power Dissipation :

200mW

Transistor Application :

AMPLIFIER

Package / Case :

SC-82A, SOT-343

Collector Emitter Voltage (VCEO) :

4.1V

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Max Collector Current :

50mA

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gain :

7dB ~ 30dB

Configuration :

Single

Operating Temperature :

150°C TJ

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED