BFP640ESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Terminal Position :

Dual

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Halogen Free :

Halogen Free

Operating Temperature :

150°C TJ

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Max Collector Current :

50mA

Max Breakdown Voltage :

4.7V

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

4.1V

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Collector Emitter Breakdown Voltage :

4.7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

200mW

JESD-609 Code :

e3

Published :

2003

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.6dB ~ 2dB @ 150MHz ~ 10GHz

Gain :

7dB ~ 30dB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

4.8V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transition Frequency :

45000MHz

Contact Plating :

Tin

Transistor Element Material :

SILICON GERMANIUM CARBON

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G4

Power Dissipation :

200mW

Base Part Number :

BFP640

Number of Terminations :

4

Package / Case :

SC-82A, SOT-343

Frequency :

46GHz