BFP640FESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Base Part Number :

BFP640

Number of Terminations :

4

Number of Elements :

1

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Number of Pins :

4

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

4.7V

Transistor Element Material :

SILICON GERMANIUM CARBON

Mounting Type :

Surface Mount

Transition Frequency :

46000MHz

Max Collector Current :

50mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Package / Case :

4-SMD, Flat Leads

Packaging :

Tape and Reel (TR)

Published :

2004

Power Dissipation :

200mW

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

ECCN Code :

EAR99

Gain :

8B ~ 30.5dB

Transistor Type :

NPN

Highest Frequency Band :

X B

Terminal Position :

Dual

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

4.8V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

4.1V

Frequency - Transition :

46GHz

Max Power Dissipation :

200mW