BFP640FESDH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Transistor Type :

NPN

Lead Free :

Lead Free

Base Part Number :

BFP640

Contact Plating :

Tin

Published :

2004

Collector Emitter Voltage (VCEO) :

4.1V

Transistor Application :

AMPLIFIER

Configuration :

Single

Transistor Element Material :

SILICON GERMANIUM CARBON

Transition Frequency :

46000MHz

Frequency - Transition :

46GHz

Gain :

8B ~ 30.5dB

ECCN Code :

EAR99

Power Dissipation :

200mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

4.7V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Pins :

4

Terminal Position :

Dual

Highest Frequency Band :

X B

Package / Case :

4-SMD, Flat Leads

Collector Base Voltage (VCBO) :

4.8V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

200mW

Max Collector Current :

50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant