BFP640FH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Transistor Element Material :

SILICON GERMANIUM

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Transition Frequency :

40000MHz

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BFP640

Collector-Base Capacitance-Max :

0.2pF

Package / Case :

4-SMD, Flat Leads

Packaging :

Tape and Reel (TR)

Max Collector Current :

50mA

Collector Emitter Voltage (VCEO) :

4V

Frequency :

40GHz

Contact Plating :

Tin

Max Breakdown Voltage :

4.5V

Mount :

Surface Mount

Additional Feature :

LOW NOISE, HIGH RELIABILITY

RoHS Status :

ROHS3 Compliant

Power Dissipation :

200mW

Collector Emitter Breakdown Voltage :

4.5V

Number of Pins :

4

Gain :

23dB

Configuration :

Single

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Mounting Type :

Surface Mount

Published :

2004

Max Power Dissipation :

200mW

Transistor Type :

NPN

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Collector Base Voltage (VCBO) :

13V

Emitter Base Voltage (VEBO) :

1.2V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED