BFP640FH6327XTSA1
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- Mfr.Part #
- BFP640FH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 4-SMD, Flat Leads
- Datasheet
- Download
- Description
- RF TRANS NPN 4.5V 40GHZ 4TSFP
- Stock
- 18,512
- In Stock ：
- 18,512
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Collector Emitter Breakdown Voltage :
- 4.5V
- Max Collector Current :
- 50mA
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 4V
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOW NOISE, HIGH RELIABILITY
- Transition Frequency :
- 40000MHz
- Base Part Number :
- BFP640
- Collector Base Voltage (VCBO) :
- 13V
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 4.5V
- Mount :
- Surface Mount
- Gain :
- 23dB
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Collector-Base Capacitance-Max :
- 0.2pF
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 30mA 3V
- Emitter Base Voltage (VEBO) :
- 1.2V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 4
- Noise Figure (dB Typ @ f) :
- 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
- Transistor Type :
- NPN
- Max Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON GERMANIUM
- Contact Plating :
- Tin
- Published :
- 2004
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 40GHz
- Package / Case :
- 4-SMD, Flat Leads
- Operating Temperature :
- 150°C TJ
- Datasheets
- BFP640FH6327XTSA1
BFP640FH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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