BFP620H7764XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

2.3V

Transistor Element Material :

SILICON GERMANIUM CARBON

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Published :

2005

Lead Free :

Lead Free

Transistor Type :

NPN

Contact Plating :

Tin

Power Rating :

1W

Terminal Position :

Dual

Halogen Free :

Halogen Free

Max Breakdown Voltage :

2.8V

Transistor Application :

AMPLIFIER

Transition Frequency :

65000MHz

Max Repetitive Reverse Voltage (Vrrm) :

15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

NPN

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

2.8V

Configuration :

Single

Factory Lead Time :

4 Weeks

Operating Temperature :

150°C TJ

Power Dissipation :

185mW

Number of Terminations :

4

Package / Case :

SC-82A, SOT-343

Max Collector Current :

80mA

RoHS Status :

ROHS3 Compliant

Hold Current :

100mA

Additional Feature :

LOW NOISE

Collector Base Voltage (VCBO) :

7.5V

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Number of Elements :

1

Max Power Dissipation :

185mW

Gain :

21.5dB

Emitter Base Voltage (VEBO) :

1.2V

Frequency :

65GHz

ECCN Code :

EAR99

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA 1.5V

Collector-Base Capacitance-Max :

0.2pF

Base Part Number :

BFP620

Moisture Sensitivity Level (MSL) :

1 (Unlimited)