BFP620H7764XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

2.8V

Max Power Dissipation :

185mW

Transition Frequency :

65000MHz

Number of Terminations :

4

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Transistor Element Material :

SILICON GERMANIUM CARBON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Gain :

21.5dB

Package / Case :

SC-82A, SOT-343

Max Breakdown Voltage :

2.8V

Max Repetitive Reverse Voltage (Vrrm) :

15V

Configuration :

Single

Published :

2005

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA 1.5V

Transistor Type :

NPN

Frequency :

65GHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Contact Plating :

Tin

Collector-Base Capacitance-Max :

0.2pF

Number of Pins :

4

RoHS Status :

ROHS3 Compliant

Power Rating :

1W

ECCN Code :

EAR99

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Additional Feature :

LOW NOISE

Mount :

Surface Mount

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Hold Current :

100mA

Max Collector Current :

80mA

Collector Base Voltage (VCBO) :

7.5V

Power Dissipation :

185mW

Emitter Base Voltage (VEBO) :

1.2V

Lead Free :

Lead Free

Base Part Number :

BFP620

Collector Emitter Voltage (VCEO) :

2.3V

Packaging :

Tape and Reel (TR)