BFP650E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA 3V

Highest Frequency Band :

C B

Case Connection :

Emitter

Base Part Number :

BFP650

Collector-Base Capacitance-Max :

0.4pF

Transistor Element Material :

SILICON GERMANIUM

Package / Case :

SC-82A, SOT-343

Max Collector Current :

150mA

Gain :

10.5dB ~ 21.5dB

Power - Max :

500mW

Frequency - Transition :

37GHz

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

4.5V

Number of Terminations :

4

Transistor Type :

NPN

Max Power Dissipation :

500mW

Number of Elements :

1

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Published :

2011

Mount :

Surface Mount

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Collector Emitter Breakdown Voltage :

4.5V

Transistor Application :

AMPLIFIER

Configuration :

Single

Transition Frequency :

37000MHz

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G4

Additional Feature :

HIGH RELIABILITY, LOW NOISE