BFP640H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency :

40GHz

Number of Pins :

4

Number of Terminations :

4

Polarity/Channel Type :

NPN

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

4V

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

13V

Base Part Number :

BFP640

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gain :

12.5dB

Published :

2005

Terminal Position :

Dual

Transistor Element Material :

SILICON GERMANIUM

Collector-Base Capacitance-Max :

0.2pF

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

1.2V

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

4V

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Power Dissipation :

200mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

JESD-609 Code :

e3

Transition Frequency :

40000MHz

Transistor Type :

NPN

Max Power Dissipation :

200mW

Max Collector Current :

50mA

Terminal Form :

Gull wing

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Max Breakdown Voltage :

4.5V

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Terminal Finish :

Matte Tin (Sn)

Package / Case :

SC-82A, SOT-343