BFP640H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Collector-Base Capacitance-Max :

0.2pF

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

200mW

Collector Emitter Breakdown Voltage :

4V

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Max Collector Current :

50mA

Configuration :

Single

Mount :

Surface Mount

Mounting Type :

Surface Mount

Frequency :

40GHz

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

4

Halogen Free :

Halogen Free

Power Dissipation :

200mW

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Temperature :

150°C TJ

Number of Terminations :

4

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

13V

Transition Frequency :

40000MHz

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Collector Emitter Voltage (VCEO) :

4V

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON GERMANIUM

Gain :

12.5dB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

4.5V

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Package / Case :

SC-82A, SOT-343

JESD-609 Code :

e3

Published :

2005

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

1.2V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Packaging :

Tape and Reel (TR)

Base Part Number :

BFP640

Number of Elements :

1