BFP640H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Number of Terminations :

4

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

1.2V

Noise Figure (dB Typ @ f) :

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Mount :

Surface Mount

JESD-609 Code :

e3

Max Collector Current :

50mA

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

BFP640

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Package / Case :

SC-82A, SOT-343

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA 3V

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

4V

Packaging :

Tape and Reel (TR)

Configuration :

Single

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Halogen Free :

Halogen Free

Max Power Dissipation :

200mW

Number of Pins :

4

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

40GHz

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Max Breakdown Voltage :

4.5V

Transistor Element Material :

SILICON GERMANIUM

Collector Emitter Voltage (VCEO) :

4V

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

REACH SVHC :

No SVHC

Power Dissipation :

200mW

Published :

2005

Gain :

12.5dB

Terminal Form :

Gull wing

Transition Frequency :

40000MHz

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Collector Base Voltage (VCBO) :

13V

Collector-Base Capacitance-Max :

0.2pF