BFP650

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Base Part Number :

BFP650

Published :

2005

JESD-609 Code :

e3

Gain :

10.5dB ~ 21.5dB

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Number of Elements :

1

ECCN Code :

EAR99

Pbfree Code :

yes

Terminal Position :

Dual

Qualification Status :

Not Qualified

Highest Frequency Band :

C B

Polarity/Channel Type :

NPN

Collector-Base Capacitance-Max :

0.4pF

Voltage - Collector Emitter Breakdown (Max) :

4.5V

Power Dissipation-Max (Abs) :

0.5W

Mounting Type :

Surface Mount

Configuration :

Single

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Package / Case :

SC-82A, SOT-343

Case Connection :

Emitter

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA 3V

Current - Collector (Ic) (Max) :

150mA

Packaging :

Bulk

Transistor Element Material :

SILICON GERMANIUM

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Power - Max :

500mW

Surface Mount :

yes

Transition Frequency :

37000MHz

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Compliant

Frequency - Transition :

37GHz

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature (Max) :

150°C