BFP650

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-30 Code :

R-PDSO-G4

Base Part Number :

BFP650

Case Connection :

Emitter

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 80mA 3V

Power - Max :

500mW

Configuration :

Single

Transistor Element Material :

SILICON GERMANIUM

Current - Collector (Ic) (Max) :

150mA

Transistor Type :

NPN

Frequency - Transition :

37GHz

Terminal Form :

Gull wing

Highest Frequency Band :

C B

Pin Count :

4

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Polarity/Channel Type :

NPN

Noise Figure (dB Typ @ f) :

0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

Packaging :

Bulk

Reach Compliance Code :

Compliant

Published :

2005

Voltage - Collector Emitter Breakdown (Max) :

4.5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

4

Package / Case :

SC-82A, SOT-343

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.5W

Transition Frequency :

37000MHz

Mounting Type :

Surface Mount

Operating Temperature (Max) :

150°C

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Collector-Base Capacitance-Max :

0.4pF

Gain :

10.5dB ~ 21.5dB