BFP620E7764

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

C BAND

Subcategory :

Other Transistors

Qualification Status :

Not Qualified

Number of Elements :

1

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Gain :

21.5dB

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C (TJ)

Configuration :

Single

Manufacturer :

Infineon Technologies AG

Package Shape :

RECTANGULAR

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Power - Max :

185mW

Collector-Base Capacitance-Max :

0.2 pF

Package / Case :

SC-82A, SOT-343

Mounting Type :

Surface Mount

Series :

-

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA, 1.5V

Frequency - Transition :

65GHz

Case Connection :

Emitter

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G4

Factory Lead Time :

1 Week

Current - Collector (Ic) (Max) :

80mA

Product Status :

Active

Transistor Type :

NPN

Collector-Emitter Voltage-Max :

2.3 V

Pin Count :

4

Reach Compliance Code :

Unknown

Number of Terminals :

4

Package :

Bulk

Terminal Position :

Dual

DC Current Gain-Min (hFE) :

110

Terminal Finish :

MATTE TIN

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

2.8V

Power Dissipation-Max (Abs) :

0.185 W

Supplier Device Package :

PG-SOT343-4

Collector Current-Max (IC) :

0.08 A