BFP620E7764

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Case Connection :

Emitter

Highest Frequency Band :

C BAND

Number of Elements :

1

Transistor Element Material :

SILICON

Series :

-

Package Shape :

RECTANGULAR

Gain :

21.5dB

Collector-Base Capacitance-Max :

0.2 pF

Configuration :

Single

Transistor Type :

NPN

Collector-Emitter Voltage-Max :

2.3 V

Manufacturer :

Infineon Technologies AG

Collector Current-Max (IC) :

0.08 A

Reach Compliance Code :

Unknown

Current - Collector (Ic) (Max) :

80mA

Frequency - Transition :

65GHz

JESD-609 Code :

e3

Surface Mount :

yes

Noise Figure (dB Typ @ f) :

0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Product Status :

Active

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 50mA, 1.5V

Terminal Position :

Dual

Subcategory :

Other Transistors

Voltage - Collector Emitter Breakdown (Max) :

2.8V

Terminal Finish :

MATTE TIN

Power - Max :

185mW

Number of Terminals :

4

Operating Temperature :

150°C (TJ)

Qualification Status :

Not Qualified

Package :

Bulk

Supplier Device Package :

PG-SOT343-4

Factory Lead Time :

1 Week

Mounting Type :

Surface Mount

ECCN Code :

EAR99

DC Current Gain-Min (hFE) :

110

Pin Count :

4

Transistor Application :

AMPLIFIER

Package / Case :

SC-82A, SOT-343

Power Dissipation-Max (Abs) :

0.185 W

JESD-30 Code :

R-PDSO-G4