ZXMD65P02N8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.25W

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Number of Terminations :

8

Turn On Delay Time :

6.6 ns

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 15V

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Number of Channels :

2

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

700mV @ 250μA (Min)

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

ZXMD65P02

Additional Feature :

LOW THRESHOLD

Length :

5mm

Pin Count :

8

Drain-source On Resistance-Max :

0.05Ohm

JESD-609 Code :

e3

Voltage - Rated DC :

-20V

Current Rating :

-4.4A

Weight :

73.992255mg

Number of Pins :

8

Continuous Drain Current (ID) :

4A

Max Operating Temperature :

150°C

Rise Time :

29.9ns

Turn-Off Delay Time :

57.9 ns

Power - Max :

1.75W

Height :

1.5mm

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Drain Current-Max (Abs) (ID) :

4A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.9A, 4.5V

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

FET Type :

2 P-Channel (Dual)

Published :

2001

Power Dissipation :

1.25W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

29.9 ns

Number of Elements :

2

FET Feature :

Standard