DMN2004DMK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.1mm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

0.54A

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.55Ohm

Pin Count :

6

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

20V

FET Type :

2 N-Channel (Dual)

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Number of Terminations :

6

Current Rating :

540mA

Voltage - Rated DC :

20V

Continuous Drain Current (ID) :

540mA

ECCN Code :

EAR99

Length :

3mm

Published :

2011

Max Power Dissipation :

225mW

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Base Part Number :

DMN2004DMK

FET Feature :

Logic Level Gate

Number of Elements :

2

Element Configuration :

Dual

Width :

1.6mm

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Pins :

6

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

225mW

Additional Feature :

High Reliability

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6