DMN2004DMK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

REACH SVHC :

No SVHC

Voltage - Rated DC :

20V

Drain Current-Max (Abs) (ID) :

0.54A

Number of Terminations :

6

Max Power Dissipation :

225mW

Continuous Drain Current (ID) :

540mA

Pin Count :

6

Published :

2011

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

225mW

Additional Feature :

High Reliability

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.55Ohm

Transistor Application :

SWITCHING

Element Configuration :

Dual

Current Rating :

540mA

Operating Temperature :

-65°C~150°C TJ

Height :

1.1mm

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Base Part Number :

DMN2004DMK

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

3mm

Width :

1.6mm

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Drain to Source Breakdown Voltage :

20V

Package / Case :

SOT-23-6

Gate to Source Voltage (Vgs) :

8V

Number of Pins :

6

Pbfree Code :

yes

Transistor Element Material :

SILICON

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)