DMN2004DMK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

225mW

Package / Case :

SOT-23-6

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.54A

JESD-609 Code :

e3

Operating Temperature :

-65°C~150°C TJ

Current Rating :

540mA

Radiation Hardening :

No

Pbfree Code :

yes

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Lead Free

Continuous Drain Current (ID) :

540mA

Additional Feature :

High Reliability

Published :

2011

Voltage - Rated DC :

20V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.6mm

Number of Terminations :

6

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

Drain-source On Resistance-Max :

0.55Ohm

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Power Dissipation :

225mW

Base Part Number :

DMN2004DMK

Gate to Source Voltage (Vgs) :

8V

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Height :

1.1mm

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Length :

3mm