DMN2004DMK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

3mm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Max Power Dissipation :

225mW

Operating Mode :

ENHANCEMENT MODE

Width :

1.6mm

Drain Current-Max (Abs) (ID) :

0.54A

Factory Lead Time :

16 Weeks

Additional Feature :

High Reliability

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

Matte Tin (Sn)

Package / Case :

SOT-23-6

Time@Peak Reflow Temperature-Max (s) :

40

FET Feature :

Logic Level Gate

Base Part Number :

DMN2004DMK

Vgs(th) (Max) @ Id :

1V @ 250μA

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Voltage - Rated DC :

20V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Element Configuration :

Dual

Current Rating :

540mA

Terminal Form :

Gull wing

Number of Terminations :

6

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Height :

1.1mm

Number of Elements :

2

Published :

2011

Pin Count :

6

Drain-source On Resistance-Max :

0.55Ohm

Power Dissipation :

225mW

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

540mA

Transistor Element Material :

SILICON