DMN2004DMK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Radiation Hardening :

No

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Voltage - Rated DC :

20V

Package / Case :

SOT-23-6

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Published :

2011

Width :

1.6mm

Drain to Source Breakdown Voltage :

20V

REACH SVHC :

No SVHC

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

225mW

Terminal Form :

Gull wing

Height :

1.1mm

Length :

3mm

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.54A

Additional Feature :

High Reliability

Pbfree Code :

yes

Mounting Type :

Surface Mount

Base Part Number :

DMN2004DMK

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation :

225mW

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.55Ohm

Element Configuration :

Dual

Pin Count :

6

Continuous Drain Current (ID) :

540mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Lead Free :

Lead Free

Mount :

Surface Mount

Current Rating :

540mA

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

6

Operating Temperature :

-65°C~150°C TJ