DMN2004DWK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Junction Temperature (Tj) :

150°C

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

13.8 ns

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Weight :

6.010099mg

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

200mW

Number of Terminations :

6

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2011

Width :

1.35mm

Continuous Drain Current (ID) :

540mA

Threshold Voltage :

1V

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Pin Count :

6

Lead Free :

Lead Free

Length :

2.2mm

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

DMN2004DWK

Mount :

Surface Mount

Number of Pins :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Height :

1.1mm

Voltage - Rated DC :

20V

Gate to Source Voltage (Vgs) :

8V

Resistance :

550mOhm

Drain Current-Max (Abs) (ID) :

0.54A

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Turn On Delay Time :

4.1 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Current Rating :

540mA

Power Dissipation :

200mW

Pbfree Code :

yes

Number of Elements :

2

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Time@Peak Reflow Temperature-Max (s) :

40