DMN2004DWK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

20V

Resistance :

550mOhm

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2011

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1V

Mounting Type :

Surface Mount

Length :

2.2mm

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

DMN2004DWK

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Element Configuration :

Dual

Height :

1.1mm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Voltage - Rated DC :

20V

Current Rating :

540mA

Continuous Drain Current (ID) :

540mA

Mount :

Surface Mount

Number of Pins :

6

Qualification Status :

Not Qualified

Turn On Delay Time :

4.1 ns

Number of Terminations :

6

Pin Count :

6

Lead Free :

Lead Free

Turn-Off Delay Time :

13.8 ns

Width :

1.35mm

Factory Lead Time :

16 Weeks

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

200mW

JESD-609 Code :

e3

Number of Elements :

2

Weight :

6.010099mg

Max Junction Temperature (Tj) :

150°C

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Pbfree Code :

yes

Power Dissipation :

200mW

Drain Current-Max (Abs) (ID) :

0.54A