DMN2004DWK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 16V

Drain Current-Max (Abs) (ID) :

0.54A

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

20V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Resistance :

550mOhm

Operating Temperature :

-65°C~150°C TJ

Qualification Status :

Not Qualified

Threshold Voltage :

1V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Base Part Number :

DMN2004DWK

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1V @ 250μA

Continuous Drain Current (ID) :

540mA

Width :

1.35mm

FET Feature :

Logic Level Gate

Height :

1.1mm

Number of Pins :

6

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

16 Weeks

JESD-609 Code :

e3

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

Max Junction Temperature (Tj) :

150°C

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation :

200mW

Max Power Dissipation :

200mW

Weight :

6.010099mg

Current Rating :

540mA

Rds On (Max) @ Id, Vgs :

550m Ω @ 540mA, 4.5V

Pin Count :

6

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Length :

2.2mm

Pbfree Code :

yes

Lead Free :

Lead Free

Element Configuration :

Dual

Turn-Off Delay Time :

13.8 ns

Number of Terminations :

6

Turn On Delay Time :

4.1 ns

FET Type :

2 N-Channel (Dual)