AO4629

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

5.5A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

50 pF

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

2W

Drain-source On Resistance-Max :

0.03Ohm

Radiation Hardening :

No

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Current - Continuous Drain (Id) @ 25°C :

6A 5.5A

FET Type :

N and P-Channel, Common Drain

FET Feature :

Logic Level Gate

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Pbfree Code :

yes

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

6A

Power Dissipation :

2W

Number of Pins :

8

Factory Lead Time :

18 Weeks

Number of Terminations :

8

Transistor Application :

SWITCHING

Pin Count :

8

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 10V

DS Breakdown Voltage-Min :

30V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Published :

2011

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V