DMP2004VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

400mW

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

-20V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Mount :

Surface Mount

Weight :

3.005049mg

Length :

1.6mm

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Mounting Type :

Surface Mount

FET Type :

2 P-Channel (Dual)

Package / Case :

SOT-563, SOT-666

Continuous Drain Current (ID) :

530mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Height :

600μm

Rds On (Max) @ Id, Vgs :

900m Ω @ 430mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 16V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Flat

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Base Part Number :

DMP2004VK

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Published :

2012

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

0.53A

Additional Feature :

ESD PROTECTION, LOW THRESHOLD

Power Dissipation :

400mW

Number of Terminations :

6

Pbfree Code :

yes

Width :

1.2mm

Resistance :

900mOhm

JESD-609 Code :

e3

Pin Count :

6

Number of Pins :

6

ECCN Code :

EAR99